050-7600 rev e 9-2009 apt25gn120b_s(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci? ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 150a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 25a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 25a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) integrated gate resistor symbol v (br)ces v ge(th) v ce(on) i ces i ges r g(int) units volts ana symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt25gn120b(g) 1200 30 6733 75 75a @ 1200v 272 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. applications : welding, inductive heating, solar inverters, smps, motor drives, ups min typ max 1200 5 5.8 6.5 1.4 1.7 2.1 1.9 100 tbd 600 8 g c e 1200v apt25gn120b apt25gn120s APT25GN120BG* apt25gn120sg* *g denotes rohs compliant, pb free terminal finish. utilizing the latest field stop and trench gate technologies, these igbt's have ultra low v ce(on) and are ideal for low frequency applications that require absolute minimum conduction loss. easy paralleling is a result of very tight parameter distribution and a slightly positive v ce(on) temperature coef? cient. a built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. low gate charge simpli? es gate drive design and minimizes losses. ? 1200v field stop ? trench gate: low v ce(on) ? easy paralleling ? integrated gate resistor: low emi, high reliability t o - 2 4 7 g c e d 3 pak g c e (s) (b) microsemi website - http://www.microsemi.com downloaded from: http:///
050-7600 rev e 9-2009 apt25gn120b_s(g) dynamic characteristics unit c/w gm min typ max .46 n/a 5.9 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ? gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 r g is external gate resistance, not including r g(int) nor gate driver impedance. (mic4452) microsemi reserves the right to change, without notice, the speci? cations and information contained herein. symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 25a t j = 150c, r g = 4.3 7 , v ge = 15v, l = 100h,v ce = 1200v inductive switching (25c) v cc = 800v v ge = 15v i c = 25a r g = 1.0 7 t j = +25c inductive switching (125c) v cc = 800v v ge = 15v i c = 25a r g = 1.0 7 t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 6 min typ max 1800 105 85 9.5 155 10 85 75 22 17 280 135 tbd 1490 2150 22 17 335 225 tbd 2390 3075 unit pf v nc a ns m j ns m j downloaded from: http:///
050-7600 rev e 9-2009 apt25gn120b_s(g) typical performance curves bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) v ce = 960v v ce = 600v v ce = 240v i c = 25a t j = 25c 250s pulse test<0.5 % duty cycle 8070 60 50 40 30 20 10 0 7560 45 30 15 04 3.5 3 2.5 2 1.51.0 0.5 0 1.101.05 1.00 0.95 0.90 8070 60 50 40 30 20 10 0 1614 12 10 86 4 2 0 3 2.5 2 1.5 1 0.5 0 9080 70 60 50 40 30 20 10 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature 15v 11v 9v 8v 12v 10v 7v 15v 11v 10v 9v 12v 8v 7v t j = 125c t j = 25c t j = -55c t j = 25c. 250s pulse test <0.5 % duty cycle i c = 50a i c = 25a i c = 12.5a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 50a i c = 25a i c = 12.5a 0 5 10 15 0 5 10 15 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 160 180 8 10 12 14 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 downloaded from: http:///
050-7600 rev e 9-2009 apt25gn120b_s(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 800v r g = 4.3 l = 100h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ce = 800v v ge = +15v r g = 4.3 r g = 4.3 , l = 100 h, v ce = 800v v ce = 800v t j = 25c , or 125c r g = 4.3 l = 100h 3025 20 15 10 50 4540 35 30 25 20 15 10 50 70006000 5000 4000 3000 2000 1000 0 1400012000 10000 80006000 4000 2000 0 v ge = 15v t j = 125c, v ge = 15v t j = 25 or 125c,v ge = 15v t j = 25c, v ge = 15v t j = 125c t j = 25c v ce = 800v v ge = +15v r g = 4.3 t j = 125c t j = 25c v ce = 800v v ge = +15v r g = 4.3 e on2, 50a e off, 50a e off, 25a e on2, 25a e on2, 12.5a e off, 12.5a e on2, 50a e off, 50a e on2, 25a e off, 25a e on2, 12.5a e off, 12.5a v ce = 800v v ge = +15v t j = 125c 10 15 20 25 30 35 40 45 50 55 10 20 30 40 50 60 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 0 10 20 30 40 50 0 25 50 75 100 125 r g = 4.3 , l = 100 h, v ce = 800v 350300 250 200 150 100 50 0 300250 200 150 100 50 0 70006000 5000 4000 3000 2000 1000 0 70006000 5000 4000 3000 2000 1000 0 downloaded from: http:///
050-7600 rev e 9-2009 apt25gn120b_s(g) typical performance curves 0.500.40 0.30 0.20 0.10 0 z jc , thermal impedance (c/w) 0.3 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 4,0001,000 500100 5010 8070 60 50 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400 figure 19b, transient thermal impedance model 5 10 15 20 25 30 35 40 45 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current 140100 5010 c oes c res 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc c ies t j = 125 c t c = 75 c d = 50 %v ce = 800v r g = 4.3 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 0.05360.169 0.008260.353 power (watts) rc model junctiontemp. ( c) case temperature. ( c) downloaded from: http:///
050-7600 rev e 9-2009 apt25gn120b_s(g) figure 22, turn-on switching waveforms and de? nitions figure 23, turn-off switching waveforms and de? nitions t j = 125c collector current collectorvoltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collectorvoltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% i c a d.u.t. v ce figure 21, inductive switching test circuit v cc apt30dq120 to - 247 package outline 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (collector)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) collector(heat sink) 1.98 (.078)2.08 (.082) gate collector emitter 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 d 3 pak package outline e1 sac: tin, silver, copper e3 100% sn plated downloaded from: http:///
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